The nitridation of high purity, laser-synthesized silicon powder to form reaction bonded silicon nitride [electronic resource]
The nitriding kinetics of high purity 0.2 μm Si powders made from laser heated SiH₄ gas were studied with thermogravimetric analysis (TGA), X-ray diffraction, scanning electron microscopy (SEM), and transmission electron microscopy (TEM). Compared to conventional reaction bonded Si₃N₄ (RBSN), nitrid...
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| Online Access: |
Online Access (via OSTI) |
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| Corporate Author: | |
| Format: | Government Document Electronic eBook |
| Language: | English |
| Published: |
Washington, D.C. : Oak Ridge, Tenn. :
United States. Department of Energy. ; distributed by the Office of Scientific and Technical Information, U.S. Department of Energy,
1988.
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| Subjects: |
| Summary: | The nitriding kinetics of high purity 0.2 μm Si powders made from laser heated SiH₄ gas were studied with thermogravimetric analysis (TGA), X-ray diffraction, scanning electron microscopy (SEM), and transmission electron microscopy (TEM). Compared to conventional reaction bonded Si₃N₄ (RBSN), nitridation occurred more rapidly and at lower temperatures (e.g. > 97% conversion in less than ten minutes at 1250°C). Samples exhibited unusual reverse reaction gradients with more nitridation occurring inside of pellets than at the outer surfaces. Exposure to methanol retarded nitridation. |
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| Item Description: | Published through SciTech Connect. 01/01/1988. "conf-880118--1" "DE95001989" 12. annual conference on composites and advanced ceramic materials,Cocoa Beach, FL (United States),20-22 Jan 1988. Sheldon, B.W.; Haggerty, J.S. |
| Physical Description: | 20 p. : digital, PDF file. |