The nitridation of high purity, laser-synthesized silicon powder to form reaction bonded silicon nitride [electronic resource]

The nitriding kinetics of high purity 0.2 μm Si powders made from laser heated SiH₄ gas were studied with thermogravimetric analysis (TGA), X-ray diffraction, scanning electron microscopy (SEM), and transmission electron microscopy (TEM). Compared to conventional reaction bonded Si₃N₄ (RBSN), nitrid...

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Online Access: Online Access (via OSTI)
Corporate Author: Massachusetts Institute of Technology (Researcher)
Format: Government Document Electronic eBook
Language:English
Published: Washington, D.C. : Oak Ridge, Tenn. : United States. Department of Energy. ; distributed by the Office of Scientific and Technical Information, U.S. Department of Energy, 1988.
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Call Number: E 1.99:conf-880118--1
E 1.99:conf-880118--1 Available