Exceptional gettering response of epitaxially grown kerfless silicon [electronic resource]
The bulk minority-carrier lifetime in p- and n-type kerfless epitaxial (epi) crystalline silicon wafers is shown to increase >500 during phosphorus gettering. We employ kinetic defect simulations and microstructural characterization techniques to elucidate the root cause of this exceptional gette...
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| Online Access: |
Online Access (via OSTI) |
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| Format: | Government Document Electronic eBook |
| Language: | English |
| Published: |
Washington, D.C. : Oak Ridge, Tenn. :
United States. Office of the Assistant Secretary of Energy Efficiency and Renewable Energy ; distributed by the Office of Scientific and Technical Information, U.S. Department of Energy,
2016.
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| Subjects: |
Internet
Online Access (via OSTI)Online
| Call Number: |
E 1.99:1237895
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| E 1.99:1237895 | Available |