Carrier density and lifetime for different dopants in single-crystal and polycrystalline CdTe [electronic resource]
CdTe defect chemistry is adjusted by annealing samples with excess Cd or Te vapor with and without extrinsic dopants. We observe that Group I (Cu and Na) elements can increase hole density above 10<sup>16</sup> cm<sup>-3</sup>, but compromise lifetime and stability. By post-d...
Saved in:
| Online Access: |
Online Access (via OSTI) |
|---|---|
| Corporate Author: | |
| Format: | Government Document Electronic eBook |
| Language: | English |
| Published: |
Washington, D.C. : Oak Ridge, Tenn. :
United States. Office of the Assistant Secretary of Energy Efficiency and Renewable Energy ; distributed by the Office of Scientific and Technical Information, U.S. Department of Energy,
2016.
|
| Subjects: |
Internet
Online Access (via OSTI)Online
| Call Number: |
E 1.99:nrel/ja--5k00-66107
|
|---|---|
| E 1.99:nrel/ja--5k00-66107 | Available |