On the synthesis of SiC single crystals /

On the synthesis of SiC single crystals / Yoshizo Inomata, Hirokichi Tananka.

A method is proposed to synthesize SiC single crystals free of carbon particle inclusions. An empty graphite crucible is connected with the crucible containing silicon melt by means of a graphite pipe. The former crucible is heated to approximately 2,500C, as in the ordinary sublimation process, whi...

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Main Authors: Inomata, Yoshizō (Author), Tanaka, Hirokichi (Author)
Corporate Author: Air Force Cambridge Research Laboratories (U.S.)
Format: Government Document Book
Language:English
Published: L.G. Hanscom Field, Bedford, Massachusetts : Air Force Cambridge Research Laboratories, Air Force Systems Command, United States Air Force, 1972.
Series:AFCRL ; 72-527.
Translations (Air Force Cambridge Research Laboratories (U.S.)) ; no. 99.
Subjects:
Silicon carbide.
Crystal growth.
Crystals.

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Call Number: D 3.1.45/4-3:72-0527
D 3.1.45/4-3:72-0527 Available Place a Hold

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