On the formation of beta-SiC in the initial growth stage /

On the formation of beta-SiC in the initial growth stage / Y. Inomata, S. Matsumoto.

The formation of Beta-SiC at temperatures outside its thermally stable range of 1,400-1,600C was studied experimentally using the sublimation procedure and the synthetic method with molten silicon. From consideration of the molar surface energy of Beta- and alpha-SiC, the following are shown to be t...

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Main Authors: Inomata, Yoshizō (Author), Matsumoto, S. (Author)
Corporate Author: Air Force Cambridge Research Laboratories (U.S.)
Format: Government Document Book
Language:English
Published: L.G. Hanscom Field, Bedford, Massachusetts : Air Force Cambridge Research Laboratories, Air Force Systems Command, United States Air Force, 1972.
Series:AFCRL ; 72-93.
Translations (Air Force Cambridge Research Laboratories (U.S.)) ; no. 97.
Subjects:
Silicon carbide.
Crystal growth.

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Call Number: D 301.45/4-3:72-0093
D 301.45/4-3:72-0093 Available Place a Hold

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