Three-Dimensional Integration Technology for Advanced Focal Planes and Integrated Circuits [electronic resource]
Over the last five years MIT Lincoln Laboratory (MIT-LL) has developed a three-dimensional (3D) circuit integration technology that exploits the advantages of silicon-on-insulator (SOI) technology to enable wafer-level stacking and micrometer-scale electrical interconnection of fully fabricated circ...
Saved in:
| Online Access: |
Online Access |
|---|---|
| Corporate Author: | |
| Format: | Government Document Electronic eBook |
| Language: | English |
| Published: |
Washington, D.C. : Oak Ridge, Tenn. :
United States. Department of Energy. Office of Science ; distributed by the Office of Scientific and Technical Information, U.S. Department of Energy,
2007.
|
| Subjects: |
MARC
| LEADER | 00000nam a22000003u 4500 | ||
|---|---|---|---|
| 001 | b8532088 | ||
| 003 | CoU | ||
| 005 | 20160126230542.6 | ||
| 006 | m o d f | ||
| 007 | cr ||||||||||| | ||
| 008 | 160906e20070228||| o| f1|||||eng|d | ||
| 035 | |a (TOE)ost1016720 | ||
| 035 | |a (TOE)1016720 | ||
| 040 | |a TOE |c TOE | ||
| 049 | |a GDWR | ||
| 072 | 7 | |a 99 |2 edbsc | |
| 086 | 0 | |a E 1.99:1016720 | |
| 086 | 0 | |a E 1.99:1016720 | |
| 245 | 0 | 0 | |a Three-Dimensional Integration Technology for Advanced Focal Planes and Integrated Circuits |h [electronic resource] |
| 260 | |a Washington, D.C. : |b United States. Department of Energy. Office of Science ; |a Oak Ridge, Tenn. : |b distributed by the Office of Scientific and Technical Information, U.S. Department of Energy, |c 2007. | ||
| 300 | |a 0:56:59 : |b digital, PDF file. | ||
| 336 | |a text |b txt |2 rdacontent. | ||
| 337 | |a computer |b c |2 rdamedia. | ||
| 338 | |a online resource |b cr |2 rdacarrier. | ||
| 500 | |a Published through SciTech Connect. | ||
| 500 | |a 02/28/2007. | ||
| 500 | |a Fermilab Colloquia, Fermi National Accelerator Laboratory (FNAL), Batvia, Illinois (United States), presented on February 28, 2007. | ||
| 500 | |a Keast, Craig. | ||
| 520 | 3 | |a Over the last five years MIT Lincoln Laboratory (MIT-LL) has developed a three-dimensional (3D) circuit integration technology that exploits the advantages of silicon-on-insulator (SOI) technology to enable wafer-level stacking and micrometer-scale electrical interconnection of fully fabricated circuit wafers. Advanced focal plane arrays have been the first applications to exploit the benefits of this 3D integration technology because the massively parallel information flow present in 2D imaging arrays maps very nicely into a 3D computational structure as information flows from circuit-tier to circuit-tier in the z-direction. To date, the MIT-LL 3D integration technology has been used to fabricate four different focal planes including: a 2-tier 64 x 64 imager with fully parallel per-pixel A/D conversion; a 3-tier 640 x 480 imager consisting of an imaging tier, an A/D conversion tier, and a digital signal processing tier; a 2-tier 1024 x 1024 pixel, 4-side-abutable imaging modules for tiling large mosaic focal planes, and a 3-tier Geiger-mode avalanche photodiode (APD) 3-D LIDAR array, using a 30 volt APD tier, a 3.3 volt CMOS tier, and a 1.5 volt CMOS tier. Recently, the 3D integration technology has been made available to the circuit design research community through DARPA-sponsored Multiproject fabrication runs. The first Multiproject Run (3DL1) completed fabrication in early 2006 and included over 30 different circuit designs from 21 different research groups. 3D circuit concepts explored in this run included stacked memories, field programmable gate arrays (FPGAs), and mixed-signal circuits. The second Multiproject Run (3DM2) is currently in fabrication and includes particle detector readouts designed by Fermilab. This talk will provide a brief overview of MIT-LL's 3D-integration process, discuss some of the focal plane applications where the technology is being applied, and provide a summary of some of the Multiproject Run circuit results. | |
| 536 | |b AC02-07CH11359. | ||
| 650 | 7 | |a Design. |2 local. | |
| 650 | 7 | |a Fabrication. |2 local. | |
| 650 | 7 | |a Integrated Circuits. |2 local. | |
| 650 | 7 | |a Optical Radar. |2 local. | |
| 650 | 7 | |a Photodiodes. |2 local. | |
| 650 | 7 | |a Processing. |2 local. | |
| 650 | 7 | |a General And Miscellaneous//Mathematics, Computing, And Information Science. |2 edbsc. | |
| 710 | 2 | |a Fermi National Accelerator Laboratory. |4 res. | |
| 710 | 1 | |a United States. |b Department of Energy. |b Office of Science. |4 spn. | |
| 710 | 1 | |a United States. |b Department of Energy. |b Office of Scientific and Technical Information. |4 dst. | |
| 856 | 4 | 0 | |u http://www.osti.gov/scitech/biblio/1016720 |z Online Access |
| 907 | |a .b85320882 |b 03-08-23 |c 02-23-16 | ||
| 998 | |a web |b 09-09-16 |c f |d m |e p |f eng |g |h 0 |i 2 | ||
| 956 | |a Information bridge | ||
| 999 | f | f | |i d6ca5e99-02cf-534d-b50d-56f239043cb7 |s f0f8074a-ab0b-5eaa-bb85-64f010138751 |
| 952 | f | f | |p Can circulate |a University of Colorado Boulder |b Online |c Online |d Online |e E 1.99:1016720 |h Superintendent of Documents classification |i web |n 1 |