Nanometer scale high-aspect-ratio trench etching at controllable angles using ballistic reactive ion etching

Nanometer scale high-aspect-ratio trench etching at controllable angles using ballistic reactive ion etching [electronic resource]

We demonstrate a low pressure reactive ion etching process capable of patterning nanometer scale angled sidewalls and three dimensional structures in photoresist. At low pressure the plasma has a large dark space region where the etchant ions have very large highly-directional mean free paths. Mount...

Full description

Saved in:
Bibliographic Details
Online Access: Online Access
Main Authors: Wu, Stephen (Author), Roediger, Peter (Author), Dynes, Robert (Author), Cybart, Shane (Author), Ulin-Avila, Erick (Author), Wong, Travis (Author)
Corporate Author: Lawrence Berkeley National Laboratory (Researcher)
Format: Government Document Electronic eBook
Language:English
Published: Washington, D.C. : Oak Ridge, Tenn. : United States. Department of Energy. Office of Science ; distributed by the Office of Scientific and Technical Information, U.S. Department of Energy, 2012.
Subjects:
Nanoscience And Nanotechnology.

Internet

Online Access

Online

Holdings details from Online
Call Number: E 1.99:lbnl-6086e
E 1.99:lbnl-6086e Available

Similar Items