Preparation and characterization of hydrogenated amorphous silicon thin films and thin film solar cells produced by ion plating techniques. Second quarterly progress report, 1 April 1979-30 Jun 1979 [electronic resource]
Using quartz substrates, hydrogenated a-Si thin films have now been produced both by flow discharge decomposition of silane and by the controlled ion plating of high purity silicon through flow discharges composed of silane, hydrogen, and argon using a modified Takagi apparatus. Thus far, thin films...
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Corporate Authors: | , |
Format: | Government Document Electronic eBook |
Language: | English |
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Washington, D.C : Oak Ridge, Tenn. :
United States. Department of Energy ; distributed by the Office of Scientific and Technical Information, U.S. Department of Energy,
1979.
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Internet
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Call Number: |
E 1.99:doe/et/23041-2
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E 1.99:doe/et/23041-2 | Available |