Electron diffraction and microscopy studies of the structure of grain boundaries in silicon. MSC Report No. 4151 [electronic resource]
The diffraction effects expected from the periodic structure of twist boundaries in Si were determined by an examination of the reciprocal lattice of these boundaries. Methods of analysis were developed to distinguish between the real diffraction spots due to the periodic boundary structure and thos...
Saved in:
| Online Access: |
Online Access |
|---|---|
| Corporate Author: | |
| Format: | Government Document Electronic eBook |
| Language: | English |
| Published: |
Ithaca, N.Y. : Oak Ridge, Tenn. :
Cornell University. Materials Science Center ; distributed by the Office of Scientific and Technical Information, U.S. Department of Energy,
1980.
|
| Subjects: |
| Summary: | The diffraction effects expected from the periodic structure of twist boundaries in Si were determined by an examination of the reciprocal lattice of these boundaries. Methods of analysis were developed to distinguish between the real diffraction spots due to the periodic boundary structure and those due to double diffraction effects. The electron microscope images for the boundaries studied in Si bicrystals frequently were complex and contained Moire fringes which provided no information on the actual boundary structure. By analyzing the electron diffraction patterns from these boundaries for the presence of new diffraction spots it was possible to show that all the ..sigma..1 (001), ..sigma..1 (111), and ..sigma..3 (111) twist boundaries examined have a periodic structure. |
|---|---|
| Item Description: | Published through SciTech Connect. 02/01/1980. "coo-2899-t2" Carter, C.B.; Sass, S.L.; Foell, H.; Ast, D.G. |
| Physical Description: | Pages: 42 : digital, PDF file. |