Electron diffraction and microscopy studies of the structure of grain boundaries in silicon. MSC Report No. 4151

Electron diffraction and microscopy studies of the structure of grain boundaries in silicon. MSC Report No. 4151 [electronic resource]

The diffraction effects expected from the periodic structure of twist boundaries in Si were determined by an examination of the reciprocal lattice of these boundaries. Methods of analysis were developed to distinguish between the real diffraction spots due to the periodic boundary structure and thos...

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Bibliographic Details
Online Access: Online Access
Corporate Author: Cornell University. Materials Science Center (Researcher)
Format: Government Document Electronic eBook
Language:English
Published: Ithaca, N.Y. : Oak Ridge, Tenn. : Cornell University. Materials Science Center ; distributed by the Office of Scientific and Technical Information, U.S. Department of Energy, 1980.
Subjects:
Silicon.
Grain Boundaries.
Crystal Structure.
Dislocations.
Electron Diffraction.
Lattice Parameters.
Orientation.
Relaxation.
Coherent Scattering.
Crystal Defects.
Diffraction.
Elements.
Microstructure.
Scattering.
Line Defects.
Semimetals.
Materials Science.

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Call Number: E 1.99:coo-2899-t2
E 1.99:coo-2899-t2 Available

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