Internal friction in intrinsic and N-type germanium and silicon

Internal friction in intrinsic and N-type germanium and silicon [electronic resource]

The high-temperature internal friction of germanium and silicon, intrinsic and highly n-type, was measured as a function of temperature, frequency, dislocation density, and dopant concentration. Two features found in the internal-friction spectrum were investigated. At moderate temperatures in both...

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Bibliographic Details
Online Access: Online Access (via OSTI)
Corporate Author: University of Illinois at Urbana-Champaign (Researcher)
Format: Government Document Thesis Electronic eBook
Language:English
Published: Washington, D.C. : Oak Ridge, Tenn. : U.S. Atomic Energy Commission ; distributed by the Office of Scientific and Technical Information, U.S. Department of Energy, 1974.
Subjects:
Charge Carriers.
Damping.
Deformation.
Dislocations.
Doped Materials.
N-Type Conductors Germanium.
Silicon.
N80730* > General & Miscellaneous > Materials.
N50330 > Metals, Ceramics, & Other Materials > Plastics & Other Materials > Properties, Structure & Phase Studies.
Materials Science.

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Call Number: E 1.99:coo--1198-1029
E 1.99:coo--1198-1029 Available

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