Thin films of gallium arsenide on low-cost substrates. Quarterly project report No. 1, July 5--October 2, 1976

Thin films of gallium arsenide on low-cost substrates. Quarterly project report No. 1, July 5--October 2, 1976 [electronic resource]

The first quarter of work on the contract is summarized. The metallorganic chemical vapor deposition (MO-CVD) technique is being applied to the growth of thin films of GaAs and GaAlAs on inexpensive polycrystalline or amorphous substrate materials (glasses, glass-ceramics, alumina ceramics, and meta...

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Bibliographic Details
Online Access: Online Access
Corporate Author: Alabama A & M University (Researcher)
Format: Government Document Electronic eBook
Language:English
Published: Normal, Ala. : Oak Ridge, Tenn. : Alabama A & M University ; distributed by the Office of Scientific and Technical Information, U.S. Department of Energy, 1976.
Subjects:
Deposition.
Gallium Compounds.
Fabrication.
Crystal Growth.
Chemical Coating.
Pnictides.
Gallium Arsenides.
Direct Energy Converters.
Chemical Vapor Deposition.
Surface Coating.
Photoelectric Cells.
Gallium Arsenide Solar Cells.
Arsenic Compounds.
Photovoltaic Cells.
Cost.
Substrates.
Solar Cells.
Arsenides.
Solar Energy.

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Call Number: E 1.99:san-1202-76/1
E 1.99:san-1202-76/1 Available

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