Thin films of gallium arsenide on low-cost substrates. Quarterly project report No. 2, October 3, 1976--January 1, 1977

Thin films of gallium arsenide on low-cost substrates. Quarterly project report No. 2, October 3, 1976--January 1, 1977 [electronic resource]

The metallorganic chemical vapor deposition (MO-CVD) technique is being applied to the growth of thin films of GaAs and GaAlAs on inexpensive polycrystalline or amorphous substrate materials (glasses, glass-ceramics, alumina ceramics, and metals) for use in fabrication of large-area low-cost photovo...

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Bibliographic Details
Online Access: Online Access
Corporate Author: Alabama A & M University (Researcher)
Format: Government Document Electronic eBook
Language:English
Published: Normal, Ala. : Oak Ridge, Tenn. : Alabama A & M University ; distributed by the Office of Scientific and Technical Information, U.S. Department of Energy, 1977.
Subjects:
Deposition.
Cleaning.
Pnictides.
Direct Energy Converters.
Physical Properties.
Surface Cleaning.
Cost.
Solar Cells.
Chemical Reactors.
Arsenides.
Electrical Properties.
Ceramics.
Gallium Compounds.
Crystal Growth.
Fabrication.
Chemical Coating.
Surface Finishing.
Gallium Arsenides.
Chemical Vapor Deposition.
Surface Coating.
Photoelectric Cells.
Gallium Arsenide Solar Cells.
Arsenic Compounds.
Substrates.
Electric Conductivity.
Photovoltaic Cells.
Glass.
Materials Science.
Solar Energy.

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Call Number: E 1.99:san/1202-77/1
E 1.99:san/1202-77/1 Available

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