Influence of grain boundaries on the electrical properties of polycrystalline-silicon films. Progress report, 1980-1981

Influence of grain boundaries on the electrical properties of polycrystalline-silicon films. Progress report, 1980-1981 [electronic resource]

Research in 1980/81 was carried out in three areas: (i) electron diffraction experiments on diffusion bonded (welded) boundaries; (ii) combined EBIC and high voltage transmission electron microscopy in order to investigate the correlation between structure and electrical properties and (iii) passiva...

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Bibliographic Details
Online Access: Online Access
Format: Government Document Electronic eBook
Language:English
Published: Oak Ridge, Tenn. : distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 1981.
Subjects:
Electrical Properties.
Electron Diffraction.
Semimetals.
Scattering.
Crystal Defects.
Diffraction.
Crystal Structure.
Silicon.
Electron Microscopy.
Grain Boundaries.
Films.
Polycrystals.
Coherent Scattering.
Dislocations.
Physical Properties.
Line Defects.
Crystals.
Elements.
Passivation.
Microstructure.
Correlations.
Microscopy.
Research Programs.
Materials Science.

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Call Number: E 1.99:doe/er/02899-t2
E 1.99:doe/er/02899-t2 Available

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