Ammothermal Growth of Gan Substrates For Leds High-Pressure Ammonothermal Process for Bulk Gallium Nitride Crystal Growth for Energy Efficient Commercially Competitive Lighting.

Ammothermal Growth of Gan Substrates For Leds [electronic resource] : High-Pressure Ammonothermal Process for Bulk Gallium Nitride Crystal Growth for Energy Efficient Commercially Competitive Lighting.

Broad Funding Opportunity Announcement Project: The new GaN crystal growth method is adapted from that used to grow quartz crystals, which are very inexpensive and represent the second-largest market for single crystals for electronic applications (after silicon). More extreme conditions are require...

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Bibliographic Details
Online Access: Online Access
Format: Government Document Electronic eBook
Language:English
Published: Oak Ridge, Tenn. : distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 2011.
Subjects:
Prices.
Lasers.
Crystal Growth Methods.
Crystal Growth.
Manufacturing.
Gallium Nitrides.
Substrates.
Silicon.
Monocrystals.
Market.
Quartz.
Energy Conservation, Consumption, And Utilization.
Energy Planning, Policy And Economy.

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Call Number: E 1.99:1047162
E 1.99:1047162 Available

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