Comparison of ICl- and IBr-Based Plasma Chemistries for Inductively Coupled Plasma Etching of GaN, InN and AlN

Comparison of ICl- and IBr-Based Plasma Chemistries for Inductively Coupled Plasma Etching of GaN, InN and AlN [electronic resource]

A parametric study of the etch characteristics of GaN, AIN and InN has been earned out with IC1/Ar and IBr/Ar chemistries in an Inductively Coupled Plasma discharge. The etch rates of InN and AIN were relatively independent of plasma composition, while GaN showed increased etch rates with interhalog...

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Bibliographic Details
Online Access: Online Access
Corporate Author: Sandia National Laboratories (Researcher)
Format: Government Document Electronic eBook
Language:English
Published: Washington, D.C : Oak Ridge, Tenn. : United States. Dept. of Energy ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 1998.
Subjects:
Indium Nitrides.
Plasma.
Aluminium Nitrides.
Etching.
Gallium Nitrides.
Materials Science.

MARC

LEADER 00000nam a22000003u 4500
001 b7315208
003 CoU
005 20091103000000.0
006 m o d f
007 cr |||||||||||
008 130211e19981201dcu o| f0|||||eng|d
035 |a (TOE)ost2032 
035 |a (TOE)2032 
040 |a TOE  |c TOE 
049 |a GDWR 
072 7 |a 36  |2 edbsc 
086 0 |a E 1.99:sand98-2687j 
086 0 |a E 1.99:sand98-2687j 
088 |a sand98-2687j 
245 0 0 |a Comparison of ICl- and IBr-Based Plasma Chemistries for Inductively Coupled Plasma Etching of GaN, InN and AlN  |h [electronic resource] 
260 |a Washington, D.C :  |b United States. Dept. of Energy ;  |a Oak Ridge, Tenn. :  |b distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy,  |c 1998. 
336 |a text  |b txt  |2 rdacontent. 
337 |a computer  |b c  |2 rdamedia. 
338 |a online resource  |b cr  |2 rdacarrier. 
500 |a Published through the Information Bridge: DOE Scientific and Technical Information. 
500 |a 12/01/1998. 
500 |a "sand98-2687j" 
500 |a "DE00002032" 
500 |a Material Science Engineering B FT. 
500 |a Abernathy, C.R.; Donovan, S.M.; Hays, D.C.; Han, J.; Shul, R.J.; Pearton, S.J.; Cho, H.; Jung, K.B.; Hahn, Y.B. 
520 3 |a A parametric study of the etch characteristics of GaN, AIN and InN has been earned out with IC1/Ar and IBr/Ar chemistries in an Inductively Coupled Plasma discharge. The etch rates of InN and AIN were relatively independent of plasma composition, while GaN showed increased etch rates with interhalogen concentration. Etch rates for all materials increased with increasing rf chuck power, indicating that higher ion bombardment energies are more efficient in enhancing sputter resorption of etch products. The etch rates increased for source powers up to 500 W and remained relatively thereafter for all materials, while GaN and InN showed maximum etch rates with increasing pressure. The etched GaN showed extremely smooth surfaces, which were somewhat better with IBr/Ar than with IC1/Ar. Maximum selectivities of- 14 for InN over GaN and >25 for InN over AIN were obtained with both chemistries. 
536 |b AC04-94AL85000. 
650 7 |a Indium Nitrides.  |2 local. 
650 7 |a Plasma.  |2 local. 
650 7 |a Aluminium Nitrides.  |2 local. 
650 7 |a Etching.  |2 local. 
650 7 |a Gallium Nitrides.  |2 local. 
650 7 |a Materials Science.  |2 edbsc. 
710 2 |a Sandia National Laboratories.  |4 res. 
710 1 |a United States.  |b Department of Energy.  |4 spn. 
710 1 |a United States.  |b Department of Energy.  |b Office of Scientific and Technical Information.  |4 dst. 
856 4 0 |u http://www.osti.gov/servlets/purl/2032-Ztj9do/webviewable/  |z Online Access 
907 |a .b73152080  |b 03-07-23  |c 02-11-13 
998 |a web  |b 02-11-13  |c f  |d m   |e p  |f eng  |g dcu  |h 0  |i 2 
956 |a Information bridge 
999 f f |i 58523879-e386-5041-94ba-44d7773967dc  |s a821732d-5b59-5122-aa15-31efc358762c 
952 f f |p Can circulate  |a University of Colorado Boulder  |b Online  |c Online  |d Online  |e E 1.99:sand98-2687j  |h Superintendent of Documents classification  |i web  |n 1 

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