Comparison of ICl- and IBr-Based Plasma Chemistries for Inductively Coupled Plasma Etching of GaN, InN and AlN [electronic resource]
A parametric study of the etch characteristics of GaN, AIN and InN has been earned out with IC1/Ar and IBr/Ar chemistries in an Inductively Coupled Plasma discharge. The etch rates of InN and AIN were relatively independent of plasma composition, while GaN showed increased etch rates with interhalog...
Saved in:
| Online Access: |
Online Access |
|---|---|
| Corporate Author: | |
| Format: | Government Document Electronic eBook |
| Language: | English |
| Published: |
Washington, D.C : Oak Ridge, Tenn. :
United States. Dept. of Energy ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy,
1998.
|
| Subjects: |
Internet
Online AccessOnline
| Call Number: |
E 1.99:sand98-2687j
|
|---|---|
| E 1.99:sand98-2687j | Available |