III-Nitride Dry Etching - Comparison of Inductively Coupled Plasma Chemistries [electronic resource]
A systematic study of the etch characteristics of GaN, AlN and InN has been performed with boron halides- (BI₃ and BBr₃) and interhalogen- (ICl and IBr) based Inductively Coupled Plasmas. Maximum etch selectivities of -100:1 were achieved for InN over both GaN and AlN in the BI₃ mixtures due to the...
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Online Access |
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| Format: | Government Document Electronic eBook |
| Language: | English |
| Published: |
Washington, D.C : Oak Ridge, Tenn. :
United States. Dept. of Energy ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy,
1998.
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Internet
Online AccessOnline
| Call Number: |
E 1.99:sand98-2514j
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| E 1.99:sand98-2514j | Available |