Low temperature CVD of TaB₂ [electronic resource]
Crystalline TaB₂ has been deposited using the CVD reaction of TaCl₅ and B₂H₆ in the temperature range of 773-1200°K. Thermodynamic calculations have been made which compare the use of both B₂H₆ and BCl₃ as B source gases. The deposits obtained with B₂H₆ exhibited extremely small crystal size and con...
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Online Access |
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| Corporate Authors: | , |
| Format: | Government Document Electronic eBook |
| Language: | English |
| Published: |
Albuquerque, N.M. : Oak Ridge, Tenn. :
Sandia National Laboratories. ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy,
1980.
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| Subjects: |
| Summary: | Crystalline TaB₂ has been deposited using the CVD reaction of TaCl₅ and B₂H₆ in the temperature range of 773-1200°K. Thermodynamic calculations have been made which compare the use of both B₂H₆ and BCl₃ as B source gases. The deposits obtained with B₂H₆ exhibited extremely small crystal size and contained amorphous B when the deposition temperature was below approx. 873°K but were substoichiometric in B above this temperature. Carbon analysis indicated that C may substitute for B and thereby stabilize the diboride structure at high deposition temperatures. Microhardness of the coatings decreased with increasing B/Ta ratio and decreasing crystal size. |
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| Item Description: | Published through the Information Bridge: DOE Scientific and Technical Information. 01/01/1980. "sand-79-2167c" " conf-800439-1" International conference on metallurgical coatings, San Diego, CA, USA, 21 Apr 1980. Randich, E. |
| Physical Description: | Pages: 20 : digital, PDF file. |