Hardening of transistor circuits to ionizing radiation

Hardening of transistor circuits to ionizing radiation [electronic resource]

It is shown experimentally that transistor circuits may have their fundamental sensitivities to ionizing radiation reduced by factors of ten by addition of a simple reverse biased diode. Bipolar transistors, field effect transistors and microcircuits have been hardened. (auth)

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Bibliographic Details
Online Access: Online Access
Corporate Author: North American Aviation, inc. Atomics International Division (Researcher)
Format: Government Document Electronic eBook
Language:English
Published: Washington, D.C. : Oak Ridge, Tenn. : United States. Department of Energy. ; distributed by the Office of Scientific and Technical Information, U.S. Department of Energy, 1965.
Subjects:
*Electronic Circuits > Radiation Hardening.
*Transistors > Radiation Hardening.
Ionizing Radiations.
N46300* > Instrumentation > Radiation Effects On Instrument Components, Instruments, Or Electronic Systems.

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Call Number: E 1.99:ai--65-tdr-179
E 1.99:ai--65-tdr-179 Available

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