Microstructural development during low-dose irradiation. [3 MeV Ni/sup +/ ions]

Microstructural development during low-dose irradiation. [3 MeV Ni/sup +/ ions] [electronic resource]

Interstitial-impurity trapping has been included in a time-dependent nucleation and growth model that is used to calculate both vacancy and interstitial cluster densities and size distributions during irradiation. Calculations were performed for nickel alloys with interstitial-solute binding energie...

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Bibliographic Details
Online Access: Online Access
Corporate Author: Argonne National Laboratory (Researcher)
Format: Government Document Electronic eBook
Language:English
Published: Washington, D.C. : Oak Ridge, Tenn. : United States. Department of Energy. ; distributed by the Office of Scientific and Technical Information, U.S. Department of Energy, 1978.
Subjects:
Nickel Base Alloys.
Microstructure.
Physical Radiation Effects.
Silicon Alloys.
Binding Energy.
Impurities.
Interstitials.
Nucleation.
Point Defects.
Trapping.
Alloys.
Crystal Defects.
Crystal Structure.
Energy.
Nickel Alloys.
Radiation Effects.
Materials Science.

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Call Number: E 1.99:conf-780722-13
E 1.99:conf-780722-13 Available

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