Redistribution of ion implanted boron induced by pulsed laser annealing

Redistribution of ion implanted boron induced by pulsed laser annealing [electronic resource]

Secondary ion mass spectrometry has been used to study changes in the profile of ¹¹B implanted into silicon and subsequently laser annealed using the Q-switched output of a ruby laser. Redistribution of the as-implanted profile is found to be pulse energy density and pulse number dependent. Calculat...

Full description

Saved in:
Bibliographic Details
Online Access: Online Access
Corporate Author: Oak Ridge National Laboratory (Researcher)
Format: Government Document Electronic eBook
Language:English
Published: Oak Ridge, Tenn. : Oak Ridge, Tenn. : Oak Ridge National Laboratory. ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 1976.
Subjects:
Annealing.
Boron Additions.
Depth Dose Distributions.
Ion Scattering Analysis.
Semimetals.
Silicon.
Electromagnetic Radiation.
Radiation Dose Distributions.
Heat Treatments.
Diffusion.
Radiations.
Secondary Emission.
Chemical Analysis.
Nondestructive Analysis.
Spatial Dose Distributions.
Pulse Techniques.
Elements.
Ion Implantation.
Alloys.
Laser Radiation.
Emission.
Boron Alloys.
Boron.
Materials Science.

Internet

Online Access

Online

Holdings details from Online
Call Number: E 1.99:conf-7605178-1
E 1.99:conf-7605178-1 Available

Similar Items