Extent of annealed or melted regions as a function of energy of pulsed laser irradiation

Extent of annealed or melted regions as a function of energy of pulsed laser irradiation [electronic resource]

The depth of melt front penetration induced by Q-switched ruby laser irradiation has been studied by electron microscopy for laser pulses of different duration and energy density in thermally diffused and ion implanted silicon. In thermally diffused specimens, dissolution of dislocation loops and pr...

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Bibliographic Details
Online Access: Online Access
Corporate Author: Oak Ridge National Laboratory (Researcher)
Format: Government Document Electronic eBook
Language:English
Published: Washington, D.C. : Oak Ridge, Tenn. : United States. Department of Energy. ; distributed by the Office of Scientific and Technical Information, U.S. Department of Energy, 1978.
Subjects:
Silicon.
Ion Implantation.
Annealing.
Arsenic 75.
Boron 11.
Defects.
Diffusion.
Kev Range 10-100.
Lasers.
Melting.
Phosphorus.
Phosphorus 31.
Arsenic Isotopes.
Boron Isotopes.
Elements.
Energy Range.
Heat Treatments.
Intermediate Mass Nuclei.
Isomeric Transition Isotopes.
Isotopes.
Kev Range.
Light Nuclei.
Nonmetals.
Nuclei.
Phase Transformations.
Phosphorus Isotopes.
Radioisotopes.
Seconds Living Radioisotopes.
Semimetals.
Odd-Even Nuclei.
Stable Isotopes.
Materials Science.

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Call Number: E 1.99:conf-781121--20
E 1.99:conf-781121--20 Available

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