High power impulse magnetron sputtering and related discharges [electronic resource] : scalable plasma sources for plasma-based ion implantation and deposition.
High power impulse magnetron sputtering (HIPIMS) and related self-sputtering techniques are reviewed from a viewpoint of plasma-based ion implantation and deposition (PBII&D). HIPIMS combines the classical, scalable sputtering technology with pulsed power, which is an elegant way of ionizing the...
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Online Access |
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| Format: | Government Document Electronic eBook |
| Language: | English |
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Berkeley, Calif. : Oak Ridge, Tenn. :
Lawrence Berkeley National Laboratory ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy,
2009.
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| Subjects: |
MARC
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| 245 | 0 | 0 | |a High power impulse magnetron sputtering and related discharges |h [electronic resource] : |b scalable plasma sources for plasma-based ion implantation and deposition. |
| 260 | |a Berkeley, Calif. : |b Lawrence Berkeley National Laboratory ; |a Oak Ridge, Tenn. : |b distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, |c 2009. | ||
| 300 | |a 11 : |b digital, PDF file. | ||
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| 500 | |a 09/01/2009. | ||
| 500 | |a "lbnl-2550e" | ||
| 500 | |a Surface and Coatings Technology ISSN 0257-8972; SCTEEJ FT. | ||
| 500 | |a Anders, Andre. | ||
| 500 | |a Accelerator&. | ||
| 500 | |a Fusion Research Division. | ||
| 520 | 3 | |a High power impulse magnetron sputtering (HIPIMS) and related self-sputtering techniques are reviewed from a viewpoint of plasma-based ion implantation and deposition (PBII&D). HIPIMS combines the classical, scalable sputtering technology with pulsed power, which is an elegant way of ionizing the sputtered atoms. Related approaches, such as sustained self-sputtering, are also considered. The resulting intense flux of ions to the substrate consists of a mixture of metal and gas ions when using a process gas, or of metal ions only when using ̀gasless? or pure self-sputtering. In many respects, processing with HIPIMS plasmas is similar to processing with filtered cathodic arc plasmas, though the former is easier to scale to large areas. Both ion implantation and etching (high bias voltage, without deposition) and thin film deposition (low bias, or bias of low duty cycle) have been demonstrated. | |
| 520 | 0 | |a High Power Impulse Magentron Sputtering, Plasma, Review. | |
| 536 | |b DE-AC02-05CH11231. | ||
| 650 | 7 | |a Deposition. |2 local. | |
| 650 | 7 | |a Processing. |2 local. | |
| 650 | 7 | |a Mixtures. |2 local. | |
| 650 | 7 | |a Atoms. |2 local. | |
| 650 | 7 | |a Plasma. |2 local. | |
| 650 | 7 | |a Substrates. |2 local. | |
| 650 | 7 | |a Ion Implantation. |2 local. | |
| 650 | 7 | |a Sputtering. |2 local. | |
| 650 | 7 | |a Magnetrons. |2 local. | |
| 650 | 7 | |a Thin Films. |2 local. | |
| 650 | 7 | |a Etching. |2 local. | |
| 710 | 2 | |a Lawrence Berkeley National Laboratory. |4 res. | |
| 710 | 2 | |a Lawrence Berkeley National Laboratory. |b Environmental Energy Technologies Division. |4 spn. | |
| 710 | 1 | |a United States. |b Department of Energy. |b Office of Scientific and Technical Information. |4 dst. | |
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