Ion Implanted Ge [electronic resource] : B Far Infrard Blocked Impurity BandDetectors.
Ge Blocked Impurity Band (BIB) photoconductors have the potential to replace stressed Ge:Ga photoconductors for far-infrared astronomical observations. A novel planar BIB device has been fabricated in which ion-implanted boron is used to form the blocking and absorbing layers of necessary purity and...
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| Online Access: |
Online Access |
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| Format: | Government Document Electronic eBook |
| Language: | English |
| Published: |
Washington, D.C. : Oak Ridge, Tenn. :
United States. Dept. of Energy. Office of Science ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy,
2006.
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Internet
Online AccessOnline
| Call Number: |
E 1.99:lbnl--60444
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| E 1.99:lbnl--60444 | Available |