Electrical activation and spin coherence of ultra low doseantimony implants in silicon

Electrical activation and spin coherence of ultra low doseantimony implants in silicon [electronic resource]

We implanted ultra low doses (0.2 to 2 x 10¹¹ cm⁻²) of Sb ions into isotopically enriched ²⁸Si, and probed electrical activation and electron spin relaxation after rapid thermal annealing. Strong segregation of dopants towards both Si₃N₄ and SiO₂ interfaces limits electrical activation. Pulsed Elect...

Full description

Saved in:
Bibliographic Details
Online Access: Online Access
Corporate Author: Lawrence Berkeley National Laboratory (Researcher)
Format: Government Document Electronic eBook
Language:English
Published: Washington, D.C : Oak Ridge, Tenn. : United States. Dept. of Energy ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 2005.
Subjects:
Relaxation.
Annealing.
Antimony.
Spin Echo.
Spin.
Silicon.
Segregation.
Hydrogen.
Electron Spin Resonance.
Electrons.
Benchmarks.
Decay.
Materials Science.
Condensed Matter Physics, Superconductivity And Superfluidity.

Internet

Online Access

Online

Holdings details from Online
Call Number: E 1.99:lbnl--58656
E 1.99:lbnl--58656 Available

Similar Items