Characterization of liquid phase epitaxial GaAs forblocked-impurity-band far-infrared detectors

Characterization of liquid phase epitaxial GaAs forblocked-impurity-band far-infrared detectors [electronic resource]

GaAs Blocked-Impurity-Band (BIB) photoconductor detectors have the potential to become the most sensitive, low noise detectors in the far-infrared below 45.5 cm⁻¹ (220 μm). We have studied the characteristics of liquid phase epitaxial GaAs films relevant to BIB production, including impurity band fo...

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Bibliographic Details
Online Access: Online Access
Corporate Author: Lawrence Berkeley National Laboratory (Researcher)
Format: Government Document Electronic eBook
Language:English
Published: Washington, D.C. : Oak Ridge, Tenn. : United States. Dept. of Energy. Office of Science ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 2004.
Subjects:
Hall Effect.
Photoconductors.
Excited States.
Absorption.
Production.
Materials Science.

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Call Number: E 1.99:lbnl--54864
E 1.99:lbnl--54864 Available

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