Effect of pressure on the luminescence emissions in CuGaSe2 [electronic resource]
We present the results of a pressure-dependent photoluminescence (PL) study on CuGaSe₂ films grown on GaAs substrate by metalorganic vapor phase epitaxy. The low-temperature PL spectra of the CuGaSe₂ samples measured at atmospheric pressure are dominated by one near band-edge exciton luminescence li...
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Format: | Government Document Electronic eBook |
Language: | English |
Published: |
Washington, D.C. : Oak Ridge, Tenn. :
United States. Dept. of Energy. Division of Materials Sciences and Engineering ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy,
2004.
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Internet
Online AccessOnline
Call Number: |
E 1.99:lbnl--55830
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E 1.99:lbnl--55830 | Available |