Effect of pressure on the luminescence emissions in CuGaSe2

Effect of pressure on the luminescence emissions in CuGaSe2 [electronic resource]

We present the results of a pressure-dependent photoluminescence (PL) study on CuGaSe₂ films grown on GaAs substrate by metalorganic vapor phase epitaxy. The low-temperature PL spectra of the CuGaSe₂ samples measured at atmospheric pressure are dominated by one near band-edge exciton luminescence li...

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Bibliographic Details
Online Access: Online Access
Corporate Author: Lawrence Berkeley National Laboratory (Researcher)
Format: Government Document Electronic eBook
Language:English
Published: Washington, D.C. : Oak Ridge, Tenn. : United States. Dept. of Energy. Division of Materials Sciences and Engineering ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 2004.
Subjects:
Pressure Coefficient.
Recombination.
Photoluminescence.
Spectra.
Substrates.
Luminescence.
Defects.
Vapor Phase Epitaxy.
Excitons.
Atmospheric Pressure.
Materials Science.

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Call Number: E 1.99:lbnl--55830
E 1.99:lbnl--55830 Available

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