Effect of pressure on the luminescence emissions in CuGaSe2 [electronic resource]
We present the results of a pressure-dependent photoluminescence (PL) study on CuGaSe₂ films grown on GaAs substrate by metalorganic vapor phase epitaxy. The low-temperature PL spectra of the CuGaSe₂ samples measured at atmospheric pressure are dominated by one near band-edge exciton luminescence li...
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Online Access |
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| Format: | Government Document Electronic eBook |
| Language: | English |
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Washington, D.C. : Oak Ridge, Tenn. :
United States. Dept. of Energy. Division of Materials Sciences and Engineering ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy,
2004.
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| Summary: | We present the results of a pressure-dependent photoluminescence (PL) study on CuGaSe₂ films grown on GaAs substrate by metalorganic vapor phase epitaxy. The low-temperature PL spectra of the CuGaSe₂ samples measured at atmospheric pressure are dominated by one near band-edge exciton luminescence line and two strong and relatively broad emissions associated with donor acceptor pairs (DAP). All the observed luminescence emission lines shift toward higher energy with increasing pressure at almost the same rate. The nearly identical pressure coefficients of the two DAP emissions as compared to that of the exciton emission confirm the suggestion that the recombination processes associated with the DAPs involve one shallow donor and two different acceptor species with different binding energies and related to two different native defects. |
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| Item Description: | Published through the Information Bridge: DOE Scientific and Technical Information. 07/13/2004. "lbnl--55830" FT. Wu, J.; Yu, K.M.; Ager III, J.W.; Walukiewicz, W.; Shan, W.; Siebentritt, S.; Rega, N. Bundesministerium fur Bildung und Forschung. Hochspannungsnetz. |