Analysis of Recombination Processes in 0.5-0.6 eV Epitaxial GaInAsSb Lattice-matched to GaSb

Analysis of Recombination Processes in 0.5-0.6 eV Epitaxial GaInAsSb Lattice-matched to GaSb [electronic resource]

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This work summarizes recent data on minority carrier lifetime in n- and p-type double heterostructures (DHs) of 0.5-0.6 eV GaInAsSb confined with GaSb and AlGaAsSb cap layers. Recombination times were measured by time-resolved photoluminescence (TRPL) and by optical frequency response (OFR) to sinus...

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Bibliographic Details
Online Access: Online Access
Corporate Authors: Lockheed Martin (Researcher), Knolls Atomic Power Laboratory (Researcher)
Format: Government Document Electronic eBook
Language:English
Published: Washington, D.C : Oak Ridge, Tenn. : United States. Dept. of Energy ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 2004.
Subjects:
Recombination.
Photoluminescence.
Excitation.
Thermionic Emission.
Optimization.
Velocity.
Confinement.
Carrier Lifetime.
Engineering.

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Call Number: E 1.99:lm-04k044
E 1.99:lm-04k044 Available

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