Diluted magnetic semiconductors formed by an ion implantation and pulsed-laser melting

Diluted magnetic semiconductors formed by an ion implantation and pulsed-laser melting [electronic resource]

Using ion implantation followed by pulsed-laser melting (PLM), we have synthesized ferromagnetic films of Ga{sub 1-x}Mnâ‚“As. Ion-channeling experiments reveal that these films are single crystalline and have high Mn substitutionality while variable temperature resistivity measurements reveal the stro...

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Bibliographic Details
Online Access: Online Access
Corporate Author: Lawrence Berkeley National Laboratory (Researcher)
Format: Government Document Electronic eBook
Language:English
Published: Washington, D.C. : Oak Ridge, Tenn. : United States. Dept. of Energy. Office of Basic Energy Sciences ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 2003.
Subjects:
Ion Channeling.
Curie Point.
Ferromagnetism.
Ion Implantation.
Monocrystals.
Magnetic Semiconductors.
Defects.
Melting.
Materials Science.

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Call Number: E 1.99:lbnl--53833
E 1.99:lbnl--53833 Available

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