Selective excitation of the yellow and blue luminescence in n- and p-doped Gallium Nitride [electronic resource]
GaN is an interesting material: technologically very useful, but still having many unexplained features. Two such features are the broad defect-related luminescence bands: the YL of n-type GaN and the BL of Mg-doped p-type GaN. We have employed selective excitation to investigate these bands. In the...
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| Format: | Government Document Thesis Electronic eBook |
| Language: | English |
| Published: |
Washington, D.C. : Oak Ridge, Tenn. :
United States. Department of Energy. Office of Basic Energy Sciences ; distributed by the Office of Scientific and Technical Information, U.S. Department of Energy,
2000.
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| Call Number: |
E 1.99:lbnl--48888
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| E 1.99:lbnl--48888 | Available |