InGaAs/GaAs quantum dot interdiffiusion induced by cap layer overgrowth

InGaAs/GaAs quantum dot interdiffiusion induced by cap layer overgrowth [electronic resource]

The effect of thermal treatment during and after growth of InGaAs/GaAs quantum dot (QD) structures was studied. Transmission electron microscopy and atomic force microscopy confirmed the presence of interacting QDs, as was expected from analysis of temperature dependence of QD photoluminescence (PL)...

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Bibliographic Details
Online Access: Online Access
Corporate Author: Lawrence Berkeley National Laboratory (Researcher)
Format: Government Document Electronic eBook
Language:English
Published: Washington, D.C. : Oak Ridge, Tenn. : United States. Dept. of Energy. Office of Science ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 2000.
Subjects:
Annealing.
Photoluminescence.
Diffusion.
Temperature Dependence.
Transmission Electron Microscopy.
Gallium Arsenides.
Atomic Force Microscopy.
Indium Arsenides.
Materials Science.

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Call Number: E 1.99:lbnl--45981
E 1.99:lbnl--45981 Available

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