InGaAs/GaAs quantum dot interdiffiusion induced by cap layer overgrowth [electronic resource]
The effect of thermal treatment during and after growth of InGaAs/GaAs quantum dot (QD) structures was studied. Transmission electron microscopy and atomic force microscopy confirmed the presence of interacting QDs, as was expected from analysis of temperature dependence of QD photoluminescence (PL)...
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Format: | Government Document Electronic eBook |
Language: | English |
Published: |
Washington, D.C. : Oak Ridge, Tenn. :
United States. Dept. of Energy. Office of Science ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy,
2000.
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Internet
Online AccessOnline
Call Number: |
E 1.99:lbnl--45981
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E 1.99:lbnl--45981 | Available |