Formation of ohmic contacts to MOCVD grown p-GaN by controlled activation of Mg [electronic resource]
We report on the formation of low resistivity ohmic contacts to p-GaN, r{sub c} < 10⁻⁴Ωcm², by increasing the concentration of the active Mg in the subcontact zone, via Zr-mediated release of hydrogen. We have investigated the process of evolution of hydrogen from MOCVD grown p-GaN via Zr-based m...
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Online Access |
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| Format: | Government Document Electronic eBook |
| Language: | English |
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Berkeley, Calif. : Oak Ridge, Tenn. :
Lawrence Berkeley National Laboratory ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy,
2000.
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Internet
Online AccessOnline
| Call Number: |
E 1.99:lbnl--46981
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| E 1.99:lbnl--46981 | Available |