Microbeam Studies of Diffusion Time Resolved Ion Beam Induced Charge Collection from Stripe-Like Junctions [electronic resource]

To design more radiation tolerant Integrated Circuits (ICs), it is essential to create and test accurate models of ionizing radiation induced charge collection dynamics within microcircuits. A new technique, Diffusion Time Resolved Ion Beam Induced Charge Collection (DTRIBICC), is proposed to measur...

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Bibliographic Details
Online Access: Online Access
Corporate Author: Sandia National Laboratories (Researcher)
Format: Government Document Electronic eBook
Language:English
Published: Washington, D.C : Oak Ridge, Tenn. : United States. Dept. of Energy ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 2000.
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Summary:To design more radiation tolerant Integrated Circuits (ICs), it is essential to create and test accurate models of ionizing radiation induced charge collection dynamics within microcircuits. A new technique, Diffusion Time Resolved Ion Beam Induced Charge Collection (DTRIBICC), is proposed to measure the average arrival time of the diffused charge at the junction. Specially designed stripe-like junctions were experimentally studied using a 12 MeV carbon microbeam with a spot size of 1 μm. The relative arrival time of ion-generated charge is measured along with the charge collection using a multiple parameter data acquisition system. The results show the importance of the diffused charge collection by junctions, which is especially significant in accounting for Multiple Bit Upset (MBUs) in digital devices.
Item Description:Published through the Information Bridge: DOE Scientific and Technical Information.
06/14/2000.
"sand2000-1511j"
Applied Physics Letters FT.
SMITH,E.B.; DUGGAN,J.L.; BAUMANN,R.C.; DOYLE,BARNEY L.; ATON,T.J.; BOUANI,M.E.; GUO,B.N.; MCDANIEL,F.D.; RENFROW,S.N.; WALSH,DAVID S.
Physical Description:14 pages : digital, PDF file.