Minority carrier diffusion, defects, and localization in InGaAsN with 2% nitrogen [electronic resource]
Electron and hole transport in compensated, InGaAsN (≈ 2% N) are examined through Hall mobility, photoconductivity, and solar cell photoresponse measurements. Short minority carrier diffusion lengths, photoconductive-response spectra, and doping dependent, thermally activated Hall mobilities reveal...
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Online Access |
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| Format: | Government Document Electronic eBook |
| Language: | English |
| Published: |
Washington, D.C : Oak Ridge, Tenn. :
United States. Dept. of Energy ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy,
2000.
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Internet
Online AccessOnline
| Call Number: |
E 1.99:sand2000-1115j
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| E 1.99:sand2000-1115j | Available |