GaAsSb/InGaAs type-II quantum wells for long-wavelength lasers on GaAs substrates

GaAsSb/InGaAs type-II quantum wells for long-wavelength lasers on GaAs substrates [electronic resource]

The authors have investigated the properties of GaAsSb/InGaAs type-II bilayer quantum well structures grown by molecule beam epitaxy for use in long-wavelength lasers on GaAs substrates. Structures with layer, strains and thicknesses designed to be thermodynamically stable against dislocation format...

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Bibliographic Details
Online Access: Online Access
Corporate Author: Sandia National Laboratories (Researcher)
Format: Government Document Electronic eBook
Language:English
Published: Washington, D.C. : Oak Ridge, Tenn. : United States. Department of Energy ; distributed by the Office of Scientific and Technical Information, U.S. Department of Energy, 2000.
Subjects:
Laser Materials.
Semiconductor Lasers.
Gallium Arsenides.
Indium Arsenides.
Optical Properties.
Heterojunctions.
Microstructure.
Electroluminescence.
Gallium Antimonides.
Photoluminescence.
Engineering.
Materials Science.

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Call Number: E 1.99:sand2000-0689j
E 1.99:sand2000-0689j Available

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