GaAs photoconductors to characterize picosecond response in GaAs integrated devices and circuits

GaAs photoconductors to characterize picosecond response in GaAs integrated devices and circuits [electronic resource]

Optoelectronic techniques that use femtosecond lasers and promise the precise measurement of transient response in high speed electronic devices and circuits have been under study for several years. We have investigated on-wafer electrical-impulse generation and sampling using femto-second-laser-exc...

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Bibliographic Details
Online Access: Online Access
Corporate Author: Los Alamos National Laboratory (Researcher)
Format: Government Document Electronic eBook
Language:English
Published: Los Alamos, N.M. : Oak Ridge, Tenn. : Los Alamos National Laboratory ; distributed by the Office of Scientific and Technical Information, U.S. Department of Energy, 1986.
Subjects:
Photoconductors.
Uses.
Pulse Generators.
Gallium Arsenides.
Gating Circuits.
Integrated Circuits.
Arsenic Compounds.
Arsenides.
Electronic Circuits.
Electronic Equipment.
Equipment.
Function Generators.
Gallium Compounds.
Microelectronic Circuits.
Pnictides.
Engineering.

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Call Number: E 1.99: conf-8608147-2
E 1.99: conf-8608147-2 Available

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