Material parameters in thick hydrogenated amorphous silicon radiation detectors

Material parameters in thick hydrogenated amorphous silicon radiation detectors [electronic resource]

Transient photoconductivity measurements of basic material parameters: carrier mobility, mobility-lifetime product and the ionized dangling bind density of thick hydrogenated amorphous silicon detectors are presented. We found that only a fraction (∼30--35%) of the total defect density as measured b...

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Bibliographic Details
Online Access: Online Access
Corporate Authors: Lawrence Berkeley Laboratory (Researcher), Lawrence Berkeley National Laboratory (Researcher)
Format: Government Document Electronic eBook
Language:English
Published: Washington, D.C : Oak Ridge, Tenn. : United States. Dept. of Energy. Office of Energy Research ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 1989.
Subjects:
Information.
Radiation Detectors.
Experimental Data.
Electrical Properties.
Semiconductor Detectors.
Numerical Data.
Si Semiconductor Detectors.
Energy Levels.
Fermi Level.
Lifetime.
Photoconductivity.
Measuring Instruments.
Physical Properties.
Ionization.
Mobility.
Electric Conductivity.
Data.
Instrumentation Related To Nuclear Science And Technology.

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Call Number: E 1.99: conf-890861--2
E 1.99: conf-890861--2 Available

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