Changes in electrical properties of high resistivity silicon caused by fast neutron damage [electronic resource]
P⁺-n⁻-n⁺ silicon radiation detectors made of high resistivity Si material (ρ ≥ 2 kΩ-cm) were irradiated to a neutron fluence of a few times of 10¹³ n/cm². Dependence of detector leakage current, reverse bias capacitance, and effective doping concentration of the Si substrate on the neutron fluence h...
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Online Access |
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| Format: | Government Document Electronic eBook |
| Language: | English |
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Washington, D.C. : Oak Ridge, Tenn. :
United States. Dept. of Energy ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy,
1991.
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Internet
Online AccessOnline
| Call Number: |
E 1.99: conf-9109329--1
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| E 1.99: conf-9109329--1 | Available |