Characterization of GaAs/Si interface structure by x-ray diffraction

Characterization of GaAs/Si interface structure by x-ray diffraction [electronic resource]

By measuring the intensity profiles along the crystal truncation rods of a Si(001) substrate, we obtain the depth sensitivity necessary for x-ray diffraction measurements of the structure of its interface with a thick GaAs overlayer which is epitaxial to, but not in registry with the substrate. By c...

Full description

Saved in:
Bibliographic Details
Online Access: Online Access
Corporate Authors: Oak Ridge National Laboratory (Researcher), University of Illinois at Urbana-Champaign (Researcher)
Format: Government Document Electronic eBook
Language:English
Published: Washington, D.C : Oak Ridge, Tenn. : United States. Dept. of Energy. Office of Energy Research ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 1990.
Subjects:
X-ray Diffraction.
Semimetals.
Scattering.
Gallium Compounds.
Crystal Defects.
Diffraction.
Crystal Structure.
Pnictides.
Gallium Arsenides.
Silicon.
Films.
Coherent Scattering.
Dislocations.
Line Defects.
Interfaces.
Arsenic Compounds.
Elements.
Stacking Faults.
Arsenides.
Materials Science.

Internet

Online Access

Online

Holdings details from Online
Call Number: E 1.99:conf-901105-30
E 1.99:conf-901105-30 Available

Similar Items