Observation of electron polarization above 80% in photoemission from strained III-V compounds [electronic resource]
Spin-polarized electron photoemission has been investigated for strained III--V compounds; (1) strained InₓGa{sub 1-x}As epitaxially grown on a GaAs substrate, and (2) strained GaAs grown on a GaAs{sub 1-x}Pₓ buffer layer. The lattice mismatched heterostructure results in a highly strained epitaxial...
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Online Access |
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| Format: | Government Document Electronic eBook |
| Language: | English |
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Washington, D.C. : Oak Ridge, Tenn. :
United States. Dept. of Energy ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy,
1992.
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Internet
Online AccessOnline
| Call Number: |
E 1.99: conf-9203100--1
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| E 1.99: conf-9203100--1 | Available |