An inverted AlGaAs/GaAs patterned-Ge tunnel junction cascade concentrator solar cell. Final subcontract report, 1 January 1991--31 August 1992 [electronic resource]
This report describes work to develop inverted-grown Al{sub 0.34}Ga{sub 0.66}As/GaAs cascades. Several significant developments are reported on as follows: (1) The AM1.5 1-sun total-area efficiency of the top Al{sub 0.34}Ga{sub 0.66}As cell for the cascade was improved from 11.3% to 13.2% (NREL meas...
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Online Access |
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| Corporate Authors: | , |
| Format: | Government Document Electronic eBook |
| Language: | English |
| Published: |
Washington, D.C. : Oak Ridge, Tenn. :
United States. Dept. of Energy ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy,
1993.
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| Subjects: |
MARC
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| 245 | 0 | 3 | |a An inverted AlGaAs/GaAs patterned-Ge tunnel junction cascade concentrator solar cell. Final subcontract report, 1 January 1991--31 August 1992 |h [electronic resource] |
| 260 | |a Washington, D.C. : |b United States. Dept. of Energy ; |a Oak Ridge, Tenn. : |b distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, |c 1993. | ||
| 300 | |a 74 p. : |b digital, PDF file. | ||
| 336 | |a text |b txt |2 rdacontent. | ||
| 337 | |a computer |b c |2 rdamedia. | ||
| 338 | |a online resource |b cr |2 rdacarrier. | ||
| 500 | |a Published through the Information Bridge: DOE Scientific and Technical Information. | ||
| 500 | |a 01/01/1993. | ||
| 500 | |a "nrel/tp--411-5289" | ||
| 500 | |a "DE93000073" | ||
| 500 | |a Venkatasubramanian, R. | ||
| 513 | |a Topical; |b 01/01/1993. | ||
| 520 | 3 | |a This report describes work to develop inverted-grown Al{sub 0.34}Ga{sub 0.66}As/GaAs cascades. Several significant developments are reported on as follows: (1) The AM1.5 1-sun total-area efficiency of the top Al{sub 0.34}Ga{sub 0.66}As cell for the cascade was improved from 11.3% to 13.2% (NREL measurement [total-area]). (2) The ̀̀cycled̀̀ organometallic vapor phase epitaxy growth (OMVPE) was studied in detail utilizing a combination of characterization techniques including Hall-data, photoluminescence, and secondary ion mass spectroscopy. (3) A technique called eutectic-metal-bonding (EMB) was developed by strain-free mounting of thin GaAs-AlGaAs films (based on lattice-matched growth on Ge substrates and selective plasma etching of Ge substrates) onto Si carrier substrates. Minority-carrier lifetime in an EMB GaAs double-heterostructure was measured as high as 103 nsec, the highest lifetime report for a freestanding GaAs thin film. (4) A thin-film, inverted-grown GaAs cell with a 1-sun AM1.5 active-area efficiency of 20.3% was obtained. This cell was eutectic-metal-bonded onto Si. (5) A thin-film inverted-grown, Al{sub 0.34}Ga{sub 0.66}As/GaAs cascade with AM1.5 efficiency of 19.9% and 21% at 1-sun and 7-suns, respectively, was obtained. This represents an important milestone in the development of an AlGaAs/GaAs cascade by OMVPE utilizing a tunnel interconnect and demonstrates a proof-of-concept for the inverted-growth approach. | |
| 536 | |b AC02-83CH10093. | ||
| 650 | 7 | |a Fabrication. |2 local. | |
| 650 | 7 | |a Progress Report. |2 local. | |
| 650 | 7 | |a Gallium Arsenides. |2 local. | |
| 650 | 7 | |a Silicon. |2 local. | |
| 650 | 7 | |a Photovoltaic Conversion. |2 local. | |
| 650 | 7 | |a Thin Films. |2 local. | |
| 650 | 7 | |a Carrier Lifetime. |2 local. | |
| 650 | 7 | |a Gallium Arsenide Solar Cells. |2 local. | |
| 650 | 7 | |a Bonding. |2 local. | |
| 650 | 7 | |a Charge Carriers. |2 local. | |
| 650 | 7 | |a Semiconductor Junctions. |2 local. | |
| 650 | 7 | |a Epitaxy. |2 local. | |
| 650 | 7 | |a Substrates. |2 local. | |
| 650 | 7 | |a Solar Concentrators. |2 local. | |
| 650 | 7 | |a Solar Energy. |2 edbsc. | |
| 710 | 2 | |a National Renewable Energy Laboratory (U.S.). |4 res. | |
| 710 | 2 | |a Research Triangle Institute. |4 res. | |
| 710 | 1 | |a United States. |b Department of Energy. |4 spn. | |
| 710 | 1 | |a United States. |b Department of Energy. |b Office of Scientific and Technical Information. |4 dst. | |
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