An inverted AlGaAs/GaAs patterned-Ge tunnel junction cascade concentrator solar cell. Final subcontract report, 1 January 1991--31 August 1992

An inverted AlGaAs/GaAs patterned-Ge tunnel junction cascade concentrator solar cell. Final subcontract report, 1 January 1991--31 August 1992 [electronic resource]

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This report describes work to develop inverted-grown Al{sub 0.34}Ga{sub 0.66}As/GaAs cascades. Several significant developments are reported on as follows: (1) The AM1.5 1-sun total-area efficiency of the top Al{sub 0.34}Ga{sub 0.66}As cell for the cascade was improved from 11.3% to 13.2% (NREL meas...

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Bibliographic Details
Online Access: Online Access
Corporate Authors: National Renewable Energy Laboratory (U.S.) (Researcher), Research Triangle Institute (Researcher)
Format: Government Document Electronic eBook
Language:English
Published: Washington, D.C. : Oak Ridge, Tenn. : United States. Dept. of Energy ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 1993.
Subjects:
Fabrication.
Progress Report.
Gallium Arsenides.
Silicon.
Photovoltaic Conversion.
Thin Films.
Carrier Lifetime.
Gallium Arsenide Solar Cells.
Bonding.
Charge Carriers.
Semiconductor Junctions.
Epitaxy.
Substrates.
Solar Concentrators.
Solar Energy.

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Call Number: E 1.99:nrel/tp--411-5289
E 1.99:nrel/tp--411-5289 Available

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