Stability and precipitation kinetics in Si{sub 1-y}C{sub y}/Si and Si{sub 1-x-y}GeₓC{sub y}/Si heterostructures prepared by solid phase epitaxy [electronic resource]
This study investigates the stability of metastable Si{sub 1-y}C{sub y}/Si heterostructures during rapid thermal annealing (RTA) over a temperature range of 1,000--1,150 C. Heterostructures of Si{sub 1-y}C{sub y}/Si and Si{sub 1-x-y}GeₓC{sub y}/Si (x = 0.77, Y ≤ .0014) were formed by solid phase epi...
Saved in:
| Online Access: |
Online Access |
|---|---|
| Corporate Author: | |
| Format: | Government Document Electronic eBook |
| Language: | English |
| Published: |
Albuquerque, N.M. : Oak Ridge, Tenn. :
Sandia National Laboratories. ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy,
1993.
|
| Subjects: |
Internet
Online AccessOnline
| Call Number: |
E 1.99: conf-931108--63
|
|---|---|
| E 1.99: conf-931108--63 | Available |