Stress relaxation in sputtered W films and W/GeSi/Si heterostructures

Stress relaxation in sputtered W films and W/GeSi/Si heterostructures [electronic resource]

We have investigated stress relaxation in GeSi/Si heterostructures on which thin W films have been sputtered with different stress states. Real-time electron microscope observations of the relaxation process demonstrate that the presence of the stressed metal film changes the relaxation kinetics of...

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Bibliographic Details
Online Access: Online Access
Corporate Authors: Lawrence Berkeley Laboratory (Researcher), Lawrence Berkeley National Laboratory (Researcher)
Format: Government Document Electronic eBook
Language:English
Published: Washington, D.C. : Oak Ridge, Tenn. : United States. Dept. of Energy ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 1993.
Subjects:
Stress Relaxation.
Germanium Silicides.
Substrates.
Silicon.
Tungsten.
Thin Films.
Heterojunctions.
Engineering.

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Call Number: E 1.99: conf-931108--11
E 1.99: conf-931108--11 Available

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