Reorientation of misfit dislocations during annealing in InGaAs/GaAs(001) interfaces

Reorientation of misfit dislocations during annealing in InGaAs/GaAs(001) interfaces [electronic resource]

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Transmission electron microscopy is applied to investigate the effect of postannealing on misfit dislocations in an In[sup 0.2]Ga[sup 0.8]As/GaAs(001) heterostructure. An orthogonal array of 60[degree] dislocations along [110] and [110] directions was observed in the interfaces of the samples grown...

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Bibliographic Details
Online Access: Online Access
Corporate Authors: Lawrence Berkeley Laboratory (Researcher), Lawrence Berkeley National Laboratory (Researcher)
Format: Government Document Electronic eBook
Language:English
Published: Washington, D.C. : Oak Ridge, Tenn. : United States. Dept. of Defense ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 1993.
Subjects:
Annealing.
Crystal Defects.
Gallium Compounds.
Crystal Structure.
Pnictides.
Gallium Arsenides.
Electron Microscopy.
Junctions.
Dislocations.
Heat Treatments.
Line Defects.
Semiconductor Junctions.
Interfaces.
Transmission Electron Microscopy.
Arsenic Compounds.
Microscopy.
Indium Arsenides.
Indium Compounds.
Heterojunctions.
Arsenides.
Materials Science.

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Call Number: E 1.99: conf-930405--19
E 1.99: conf-930405--19 Available

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