Reorientation of misfit dislocations during annealing in InGaAs/GaAs(001) interfaces [electronic resource]
Transmission electron microscopy is applied to investigate the effect of postannealing on misfit dislocations in an In[sup 0.2]Ga[sup 0.8]As/GaAs(001) heterostructure. An orthogonal array of 60[degree] dislocations along [110] and [110] directions was observed in the interfaces of the samples grown...
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Corporate Authors: | , |
Format: | Government Document Electronic eBook |
Language: | English |
Published: |
Washington, D.C. : Oak Ridge, Tenn. :
United States. Dept. of Defense ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy,
1993.
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Internet
Online AccessOnline
Call Number: |
E 1.99: conf-930405--19
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E 1.99: conf-930405--19 | Available |