High rate ECR etching of III-V nitride materials

High rate ECR etching of III-V nitride materials [electronic resource]

The III-V nitride compound semiconductors are attracting considerable attention for blue and ultraviolet light emitting diodes (LEDs) and lasers as well as high temperature electronics due to their wide band gaps and high dielectric constants. The recent progress observed in the growth of these mate...

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Bibliographic Details
Online Access: Online Access
Corporate Author: Sandia National Laboratories (Researcher)
Format: Government Document Electronic eBook
Language:English
Published: Washington, D.C. : Oak Ridge, Tenn. : United States. Dept. of Energy ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 1994.
Subjects:
Surface Properties.
Experimental Data.
Fabrication.
Indium Nitrides.
Electron Cyclotron-resonance.
Plasma.
Stoichiometry.
Gallium Nitrides.
Semiconductor Devices.
Aluminium Nitrides.
Semiconductor Materials.
Etching.
Scanning Electron Microscopy.
Engineering Not Included In Other Categories.
Materials Science.

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Call Number: E 1.99: conf-950518--6
E 1.99: conf-950518--6 Available

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